Here's Samsung's Galaxy S10 secret weapon to take on the Huawei P30

Ruben Fields
January 31, 2019

The rumors have claimed that at least one variant of the Galaxy S10+ will have 1TB of internal storage.

Samsung has announced that it is now mass producing the world's first 1TB embedded Universal Flash Storage 2.1 (eUFS) module for phones, and the timing of the launch suggests the storage chip could end up on the Galaxy S10.

Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung Electronics, explained "The 1TB eUFS is expected to play a critical role in bringing a more notebook-like user experience to the next generation of mobile devices".

The new 1TB flash components are just 11.5mm x 13.0mm, the same size as Samsung's previous 512GB chips, thanks to the use of the firm's most advanced 512-gigabit (Gb) V-NAND flash memory and 16-layer construction.

The company is also promising faster data transfer speeds, at up to 10 times the rate of a microSD card. The capacity on offer here allows users to store up to 260 10-minute videos in 4K UHD (3840×2160) format, says Samsung, putting in the shade many current "high-end" devices with 64GB of built-in storage (that can only hold 13 such videos).

Carlos Queiroz steps down as Iran head coach after Japan defeat
Iranian Minister of Youth Affairs and Sports Masoud Soltanifar also said Sunday that Iran's Football Federation will decide on Queiroz contract.

Something to look forward to: Flagship smartphones will soon be receiving 1TB of internal storage, breaking the long awaited barrier.

Random write speeds, in particular, should help enable applications like continuous high frame shooting.

"In terms of performance, the new eUFS is capable of 1000MB/s sequential read speed which is twice the speed of a typical 2.5" SATA SSD. Random writes are now 500 times faster than a normal microSD card at 50,000 IOPs.

Samsung boasts a sequential read speed of 1,000 megabytes per second (MBps).

Other reports by

Discuss This Article

FOLLOW OUR NEWSPAPER